The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Oct. 18, 2002
Applicant:
Inventors:
Wei Lu, Poughkeepsie, NY (US);
Charles N. Archie, Granite Springs, NY (US);
Chester Wasik, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 2/304 ;
U.S. Cl.
CPC ...
G01N 2/304 ;
Abstract
A method and arrangement of obtaining a transparent image of a resist contact hole or feature provided on a silicon wafer through a scanning electron microscope (SEM), with an absence of deforming the feature, such as the contact hole. In particular, the method is directed to the obtaining of a transparent image of a resist contact hole or feature by SEM without damaging the silicon wafer.
Lu, Wei. (2004). Method to obtain transparent image of resist contact hole or feature by sem without deforming the feature by ion beam (U.S. Patent No. 6683305). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6683305
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile