The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2004

Filed:

Aug. 27, 2002
Applicant:
Inventors:

Shoichi Fukui, Tokyo, JP;

Takeru Matsuoka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract

A semiconductor-device fabrication method includes a step of forming a contact hole in a semiconductor substrate and a step of forming a conductive contact hole. The step of forming the contact hole is performed by repeating two times or more a burying step of depositing a conductive material to bury the conductive material in the contact hole and an etch-back step of removing the conductive material around the contact hole by etch back.


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