The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Nov. 24, 1999
Tomonori Hino, Miyagi, JP;
Takeharu Asano, Kanagawa, JP;
Tsunenori Asatsuma, Kanagawa, JP;
Satoru Kijima, Miyagi, JP;
Kenji Funato, Kanagawa, JP;
Shigetaka Tomiya, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a Si0 , for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.