The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2004

Filed:

Sep. 07, 2000
Applicant:
Inventors:

Masaaki Iwane, Hiratsuka, JP;

Katsumi Nakagawa, Atsugi, JP;

Makoto Iwakami, Atsugi, JP;

Shoji Nishida, Hiratsuka, JP;

Noritaka Ukiyo, Atsugi, JP;

Yukiko Iwasaki, Atsugi, JP;

Masaki Mizutani, Isehara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/130 ; H01L 3/118 ;
U.S. Cl.
CPC ...
H01L 2/130 ; H01L 3/118 ;
Abstract

The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.


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