The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Jun. 07, 2002
Applicant:
Inventor:
Kyong-Min Kim, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
Disclosed is a method for fabricating a capacitor in a semiconductor device. A semiconductor substrate is provided. A bottom electrode is formed on the substrate by sequentially depositing Ru through a PECVD process and Ru through a LPCVD process on the semiconductor substrate. A Ta O dielectric layer is formed on the bottom electrode and forming a top electrode on the Ta O dielectric layer.