The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Jul. 26, 2002
Tetsuro Asano, Gunma, JP;
Katsuaki Onoda, Gunma, JP;
Yoshibumi Nakajima, Tochigi, JP;
Shigeyuki Murai, Gunma, JP;
Hisaaki Tominaga, Gunma, JP;
Koichi Hirata, Tochigi, JP;
Mikito Sakakibara, Saitama, JP;
Hidetoshi Ishihara, Gunma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer connected to the Schottky electrode crossing over the ohmic electrode. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.