The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Feb. 19, 2003
Applicant:
Inventor:
David Y. Chan, Austin, TX (US);
Assignee:
Photronics, Inc., Brookfield, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; G03C 5/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ; G03C 5/00 ;
Abstract
A method for creating a phase shift photomask which includes a layer of hard mask material, the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the phase shift photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches opaque material (and anti-reflective layer, if used) and phase shift layers.
Chan, David. (2004). Disposable hard mask for phase shift photomask plasma etching (U.S. Patent No. 6682861). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6682861
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile