The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2004

Filed:

Jul. 24, 2001
Applicant:
Inventors:

Andrew Shuh-Huei Liao, San Jose, CA (US);

Ghulam Hasnain, Palo Alto, CA (US);

Chihping Kuo, Milpitas, CA (US);

Hao-Chung Kuo, San Jose, CA (US);

Zhiqing Shi, San Jose, CA (US);

Minh Ngoc Trieu, San Jose, CA (US);

Assignee:

Lux Net Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 ;
U.S. Cl.
CPC ...
H01S 5/183 ;
Abstract

A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a semiconducting material of a second conductivity type.


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