The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6680868 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 20, 2004

Filed:

Jan. 11, 2002
Applicant:
Inventor:

Toshihiro Akamatsu, Tenri, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract

As soon as a write command is input to a nonvolatile memory cell array, an internal charge pump circuit starts pumping. When the pumping is achieved, the writing to the nonvolatile memory cell array is implemented. By keeping the internal charge pump circuit ready for a next write command even after the end of the first write operation, it is possible to cut down the time required for the activation/deactivation of the internal charge pump circuit, which would cause redundancy. When it is determined that no successive write operations are to be performed, the internal charge pump circuit is deactivated. Similar controls are carried out for the other commands which rewrite the contents of the nonvolatile memory cell array.


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Akamatsu, Toshihiro. (2004). Nonvolatile semiconductor storage device and control method thereof (U.S. Patent No. 6680868). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6680868

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