The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Mar. 07, 2002
Yutaka Ito, Hachioji, JP;
Hidetoshi Iwai, Fussa, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A memory cells are arranged at all intersections of a first word line and one line of a bit-line pair and all intersections of a second word line and the other line of the bit-line pair by arranging in parallel the first word line and the second word line consisting of different layers in the row direction with an identical pitch, and, also, alternately arranging the first word line and the second word line at an interval equal to a half of the pitch in the horizontal direction. Moreover, the selection MISFET of the memory cell is formed to have the vertical construction and the bit line located at the upper side of the substrate, where a channel region is formed, is shielded with a conductive film, a part of which forms the gate electrode.