The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Jul. 31, 2002
Kia-Seng Low, Hopewell Junction, NY (US);
John P. Hummel, Verbank, NY (US);
Igor Kasko, Fishkill, NY (US);
Gregory Costrini, Hopewell Junction, NY (US);
Other;
Abstract
A semiconductor device ( ) and method of fabrication thereof, wherein a plurality of first conductive lines ( ) are formed in a dielectric layer ( ) over a substrate ( ), and an insulating cap layer ( ) is disposed over the first conductive lines ( ) and exposed portions of the dielectric layer ( ). The insulating cap layer ( ) is patterned and etched to expose stack portions of the first conductive lines ( ). A conductive cap layer ( ) is deposited over the exposed portions of the first conductive lines ( ). A magnetic material stack ( ) is disposed over the insulating cap layer ( ), and the magnetic material stack is etched to form magnetic stacks. The insulating cap layer ( ) and conductive cap layer ( ) protect the underlying first conductive line ( ) material during the etching processes.