The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Oct. 20, 2001
Heinrich Wolf, Unterschleissheim, DE;
Wolfgang Wilkening, Pfullingen, DE;
Stephan Mettler, Reutlingen, DE;
Other;
Abstract
An ESD protective transistor comprises a heavily doped p-type base region which is arranged in a lightly doped p-well and which is provided with a first terminal. Furthermore, a heavily doped n-type emitter region is arranged in the lightly doped p-well. A heavily doped n-type collector region is separated from the lightly doped p-well through a lightly doped n-type region and is provided with a second terminal. The heavily doped n-type emitter region is not short-circuited with the heavily doped base region viy a common electrode and is of floating design. The doping types of the respective regions may be reversed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile