The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Jul. 30, 2001
Yuan Tang, San Jose, CA (US);
EON Silicon Devices, Inc., Santa Clara, CA (US);
Abstract
A method of eliminating contamination of tunnel oxide in stacked gates due to SAS photoresist process and preventing of n+ implantation caused by resist residue from the SAS photoresist process in fabricating of semiconductor memory devices is disclosed. The process provides for providing stacked gates separated by trenches on the semiconductor memory device. Source and drain implants are performed on the semiconductor memory device before the SAS etch is accomplished. The trenches between the stacked gates are filled with oxide so as to cover the entire surface of the semiconductor memory device prior to applying a SAS photoresist mask. Then, a SAS photoresist mask is applied to a flat top surface of the semiconductor memory device. A SAS etch is performed on the semiconductor memory device so as to remove the oxide. By filling in the trenches with oxide prior to applying the SAS photoresist mask, the possibility of SAS photoresist contamination of the tunnel oxide in the stacked gate has been eliminated. Further, no SAS photoresist residue is left which can block a subsequent n+ doping.