The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2004

Filed:

Dec. 07, 2001
Applicant:
Inventor:

Kazuyoshi Ueno, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

The manufacturing method of a semiconductor device includes a step of forming a lower wiring on a semiconductor substrate, a step of forming a layer insulating film on the lower wiring, a step of forming an opening that exposes the lower wiring by removing a part of the layer insulating film, a step of forming a barrier film in the opening and a step of forming an upper wiring in the opening, where the lower wiring and the upper wiring are copper including wirings composed of copper or a copper alloy, the barrier film covers the bottom face and the side face of the opening, and the barrier film on the bottom face of the opening is formed so as to have its thickness to be less than twice the diffusion length of the copper atoms in the barrier film.


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