The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Nov. 22, 2002
Applicant:
Inventors:
Jia-Wei Yang, Hsinchu, TW;
Chih-Cherng Liao, Hsinchu, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A high-voltage device process compatible with a low-voltage device process. A high-voltage device area and a low-voltage device area are defined on an epitaxial layer of a semiconductor substrate. After forming a plurality of first gate structures on the high-voltage device area, a P-body is formed in the epitaxial layer between two adjacent first gate structures. Then, a plurality of second gate structures is formed on the low-voltage device area.