The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Aug. 11, 1999
Michihisa Kohno, Tokyo, JP;
NEC Compound Semiconductor Devices, Ltd., Kanagawa, JP;
Abstract
The present invention enables reduction of a film thickness of a protection film so as to eliminate destruction caused by stress of the protection film; to increase a film thickness of an organic insulation film so as to exhibit the function of the organic insulation film sufficiently; and to reduce irregularities of the protection film thickness. In the organic insulation film formation method according to the present invention, an organic insulation film , a protection film , and a metal film are successively formed in this order on a substrate . On the metal film, a patterned photo-resist is formed so as to be used as a mask for etching the metal film. The remaining metal film is used as a mask when etching the protection film and the organic insulation film . The protection film can significantly reduce its thickness because the protection film need not be used as a mask. The organic insulation film can be set to an arbitrary thickness regardless of the protection film