The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2004

Filed:

May. 31, 2001
Applicant:
Inventor:

Koji Nakamura, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/19 ;
U.S. Cl.
CPC ...
H01S 3/19 ;
Abstract

A semiconductor device, which includes a first region having an optical waveguide layer and a second region having a light receiving layer receiving a light from the first region, that improves an intensity of the light from the light receiving layer, and a manufacturing method thereof. An active layer, a cladding layer and a contact layer in a selective growth region of a laser forming region are formed thicker than an absorptive layer, the cladding layer and the contact layer in a modulator forming region A ridge part in the laser forming region therefore has a height greater than that in the modulator forming region, Also in the ridge part, a width of contact surface of the cladding layer with the absorptive layer is greater than a width of contact surface of the cladding layer with the active layer.


Find Patent Forward Citations

Loading…