Amplifying solid-state imaging device, and method for driving the same

Abstract

A plurality of pixels, each including a photodiode that can make a transition from a first potential state (reset state) into a second potential state variable with the quantity of incident light or vice versa, are provided. A unit compensator includes first and second storage devices implementable as respective MOS capacitors. The first storage device stores thereon charge in a quantity proportional to a difference between a signal potential &phgr;s corresponding to the second potential state of each pixel and a reference potential &phgr; . The second storage device stores thereon charge in a quantity proportional to a difference between a fixed potential &phgr;d and the reference potential &phgr; . When a reset potential &phgr;r is supplied from an associated pixel, these storage devices are short-circuited with each other, thereby transferring charge in a quantity proportional to a potential difference (&phgr;s−&phgr;r) between these storage devices. After these storage devices have been electrically isolated from each other, the potential difference (&phgr;s−&phgr;r) is sensed based on the quantity of residual charge in the second storage device and then output. In this manner, a variation in threshold voltage among the amplifying transistors within the pixels can be compensated for.