The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Apr. 09, 2002
Applicant:
Inventor:
Narakazu Shimomura, Gojo, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/02 ;
U.S. Cl.
CPC ...
G05F 3/02 ;
Abstract
An internal power voltage generating circuit of a semiconductor device includes a voltage dividing circuit composed of a single field effect transistor and a plurality of resistances incorporated into a semiconductor chip. The voltage dividing circuit divides an externally supplied power voltage into two types of voltage by conducting or non-conducting the single field effect transistor. The divided voltages are supplied as an internal power voltage to a plurality of field effect transistors incorporated into the semiconductor chip.
Shimomura, Narakazu. (2004). Internal power voltage generating circuit of semiconductor device (U.S. Patent No. 6677801). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6677801
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile