The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
May. 07, 2002
Jae Seung Choi, Seoul, KR;
Sang Bae Yi, Seoul, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-Do, KR;
Abstract
Disclosed is a nonvolatile memory device comprising a semiconductor substrate defining first and second active regions arranged in one direction; a first gate insulating layer and a floating gate deposited on the first and second active regions in a predetermined pattern; a second gate insulating layer and a control gate line deposited in one direction perpendicular to the first and second active regions and covering the floating gate; first impurity regions formed in the first and second active regions at one side of the control gate line; second impurity regions formed in the first and second active regions at other side of the control gate line; first contact plugs contacted with the first impurity regions; and a common conductive line formed in one direction on the semiconductor substrate at the other side of the control gate line, for connecting the second impurity regions of the first and second active regions.