The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Mar. 06, 2002
Fumito Suzuki, Kawasaki, JP;
Hitoshi Takahashi, Kawasaki, JP;
Haruki Arai, Yokohama, JP;
Yoshihiro Yamaguchi, Saitama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor substrate is of first-conductivity-type and has a principal surface. A first semiconductor region and a second semiconductor region are of second-conductivity-type and formed apart from each other in the principal surface of the semiconductor substrate. A third semiconductor region is of second-conductivity-type and formed on the first semiconductor region. The third semiconductor region has an impurity concentration higher than that of the first semiconductor region. A fourth semiconductor region is of first-conductivity-type and formed on the third semiconductor region. A first main electrode is formed on the fourth semiconductor region. A second main electrode is formed on the second semiconductor region. A gate electrode is formed, at least on the first semiconductor region and on the principal surface of the semiconductor substrate between the fourth semiconductor region and the second semiconductor region, with a gate insulating film therebetween.