The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Oct. 30, 2001
Kouji Tominaga, Hirakata, JP;
Sanyo Electric Co., Ltd., Moriguchi, JP;
Abstract
This invention provides a light-emitting diode which is capable of extracting white light, manufactured readily and highly reliable. The light-emitting diode is fabricated by laminating a buffer layer , an Si (silicon)-doped GaN fluorescent layer , an n-GaN layer , an MQW emission layer and a p-GaN layer on a sapphire substrate in this order. The Si-doped GaN fluorescent layer is doped higher concentration of Si (silicon) than a conventional Si-doped GaN layer with sufficient good crystallinity. Such a Si-doped GaN fluorescent layer is excited by blue light generated in the MQW emission layer and emits yellow light. The yellow light is the complement for the blue light generated in the MQW emission layer. White light can be obtained by blending and extracting both of blue light and yellow light.