The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Aug. 12, 2000
Wei Liu, San Jose, CA (US);
Scott Williams, Sunnyvale, CA (US);
Stephen Yuen, Santa Clara, CA (US);
David Mui, San Jose, CA (US);
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A method for processing a silicon substrate disposed in a substrate process chamber includes transferring the substrate into the substrate process chamber. The substrate having a hard mask formed thereon and a patterned photoresist overlying the hard mask to expose portions of the hard mask. The chamber being the type having a source power system and a bias power system. The method further includes etching the exposed portions of the hard mask to expose portions of the silicon substrate underlying the hard mask. Thereafter, the patterned photoresist is exposed to a first plasma formed from a first process gas to remove the photoresist from the hard mask. Thereafter, the exposed silicon substrate is etched by exposing the substrate to a second plasma formed from a second process gas by applying RF energy from the source power system and biasing the plasma toward the substrate. The substrate is transferred out of the substrate processing chamber.