The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Sep. 27, 2002
Toshiyuki Oashi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of producing a semiconductor device having an SOI transistor and a multi-layer wiring, including: preparing a silicon substrate having a front face and a back face; forming an inter-layer insulation layer on the front face of the silicon substrate; forming a multi-layer wiring in the inter-layer insulation layer; fixing a substrate on the inter-layer insulation layer; thinning the silicon substrate from the back face into a thin film so that the silicon substrate becomes an SOI layer; and forming a channel layer and a gate electrode on a back of the channel layer in the SOI layer, and further forming a source and a drain facing each other having the channel layer in between so that an SOI transistor is obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile