The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2004

Filed:

May. 04, 2001
Applicant:
Inventors:

Po Wen Wang, San Jose, CA (US);

Evan F. Cromwell, Redwood City, CA (US);

Olu Atanda, Campbell, CA (US);

Assignee:

Toda Kogyo Corporation, Hiroshima-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 1/100 ; G11B 7/24 ;
U.S. Cl.
CPC ...
G11B 1/100 ; G11B 7/24 ;
Abstract

A silicon nitride self-lubricating layer forms the upper surface of a data storage device, such as a rotating disk or a non-rotating memory device, e.g., a credit card-type memory device using a memory strip. The silicon nitride self-lubricating layer can replace the carbon protective overcoat and liquid lubricant used in conventional data storage devices. The silicon nitride self-lubrication layer provides the desired lubrication and protection between the slider and the data storage device. The silicon nitride layer also will not evaporate under high temperatures found in an optical data storage system. In addition, a data storage device may include a plastic polymer layer over which an iron oxide material is deposited. The use of a plastic polymer layer and iron oxide recording layer is particularly advantageous because a low temperature deposition process can be used with the iron oxide material.


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