The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Dec. 10, 2001
Sung Jae Joo, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
The present invention discloses a method for cleaning a surface of a substrate where a silicon epitaxial layer will be formed before growing the silicon epitaxial layer in a selective epitaxial growth process. Firstly, a high temperature heating element is aligned in a silicon epitaxial layer growth chamber, disposed separated from the substrate, a cleaning gas is inserted into the chamber and is decomposed into an atom or radical state having high reactivity in a gas phase according to heat generation of the high temperature heating element, and is diffused into the substrate, whereby a substrate cleaning reaction is performed at a substrate temperature ranging from 400 to 600° C.