The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6675119 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 06, 2004

Filed:

Jul. 05, 2002
Applicant:
Inventor:

Erzhuang Liu, Singapore, SG;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L 1/500 ;
U.S. Cl.
CPC ...
G01L 1/500 ;
Abstract

A method and apparatus for making in situ measurements of process parameters in the adverse environment of manufacturing processes such as silicon wafer processing. Rather than using surrogate “smart wafers” that limit the ranges of processing parameters to those that allow the measuring circuitry to survive the process, the present method mounts, on the actual wafer, an enclosed, shielded apparatus in which the electronic circuitry is protected from the adverse effects of conditions such as high temperatures, electromagnetic radiation and plasmas. The wafer plus the mounted apparatus is then transported through the entire process cycle and measurements are made and recorded.


Find Patent Forward Citations

Liu, Erzhuang. (2004). In-situ measurement method and apparatus in adverse environment (U.S. Patent No. 6675119). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6675119

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