The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Nov. 21, 2001
Alexander Noam Teutsch, Dallas, TX (US);
Zbigniew Jan Lata, Dallas, TX (US);
David John Baldwin, Allen, TX (US);
Ross E. Teggatz, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention relates to a reverse bias protection structure which comprises a PMOS transistor structure having a drain portion, a gate portion, a source portion and a backgate portion, wherein the gate portion is coupled to a first voltage potential, the source portion is selectively coupleable to a power supply, and the drain portion is selectively coupleable to a circuit needing power to be supplied thereto from the power supply. The reverse bias protection structure further comprises a Schottky diode structure having an anode coupled to the source portion of the PMOS transistor structure, and a cathode coupled to the backgate portion of the PMOS structure. Under forward bias conditions, the PMOS transistor conducts and exhibits a small voltage drop thereacross. Under reverse bias conditions, the PMOS transistor is off and the Schottky structure is reverse biased, thus preventing current through the protection structure.