The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Jan. 31, 2002
Applicant:
Inventor:
Eddie Huang, Stockport, GB;
Assignee:
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1075 ; H01L 3/1105 ; H01L 3/1117 ; H01L 2/9167 ; H01L 2/9207 ;
U.S. Cl.
CPC ...
H01L 3/1075 ; H01L 3/1105 ; H01L 3/1117 ; H01L 2/9167 ; H01L 2/9207 ;
Abstract
A bipolar p-i-n diode has a first ( ) and second ( ) region of opposite conductivity type and an intermediate drift region ( ) between the first and second regions. Trenched field relief regions ( ) are arranged to deplete the intermediate drift region ( ) when the diode is reverse biased, so permitting a higher doping ( ) to be used for the intermediate drift region ( ) for a given breakdown voltage. This improves both the turn-on and turn-off characteristics of the diode.