The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Aug. 23, 1999
Applicant:
Inventors:
Sundar S. Chetlur, Orlando, FL (US);
Pradip K. Roy, Orlando, FL (US);
Anthony S. Oates, Orlando, FL (US);
Sidhartha Sen, Orlando, FL (US);
Jonathan Z-N. Zhou, Orlando, FL (US);
Assignee:
Agere Systems Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9167 ; H01L 2/9207 ; H01L 2/9227 ; H01L 3/10288 ;
U.S. Cl.
CPC ...
H01L 2/9167 ; H01L 2/9207 ; H01L 2/9227 ; H01L 3/10288 ;
Abstract
A semiconductor device having trap sites passivated with deuterium has enhanced immunity to hot carrier effects. The trap sites which are passivated with deuterium are encapsulated beneath a barrier film and are therefore resistant to having the deuterium diffuse away from the trap sites during subsequent high temperature processing operations.