The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Jun. 05, 2001
Kazuhisa Sakamoto, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
Formed on the surface of an n-type semiconductor layer ( ) taken as a collector region is a base region ( ) consisting of a p-type region, and formed in the p-type region is an emitter region ( ) consisting of an n -type region. Further, provided in the base region is a base electrode connecting portion ( ) consisting of an n -type region, and a base electrode ( ) is connected to the surface of the base electrode connecting portion, and an emitter electrode ( ) and a collector electrode ( ) are provided and connected electrically to the emitter region and the collector region ( ), respectively. As a result, a semiconductor device is obtained which has the transistor in which the reduction in power consumption with a high withstand voltage can be achieved, and the fast switching speed is possible and the large current is obtained. Further a voltage-drive type bipolar transistor such as a digital transistor is obtained which is small in load capacity while establishing a desired drive voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile