The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Nov. 29, 2001
Mitsuo Nissa, Tokyo, JP;
Other;
Abstract
A semiconductor device is disclosed that can include a gate electrode ( ) having a lower layer ( ) and a higher layer ( ), a mask insulating film ( ) formed over a higher layer ( ). A side surface insulating film ( ) may be formed on sides of a gate electrode ( ) and a side wall insulating film ( ) may be formed on the sides of a gate electrode ( ) and mask insulating film ( ). A low density impurity region ( ) may be formed with a gate electrode ( ) and side surface insulating film ( ) as a mask. A higher density impurity region ( ) may be formed with a gate electrode ( ) and side wall insulating film ( ) as a mask. A contact plug ( ) may be formed between side wall insulating films ( ) that contacts a higher density impurity region ( ). A gate electrode ( ) may have a reverse tapered shape when viewed in cross section. A lower layer ( ) may have a reverse tapered shape and/or a side surface insulating film ( ) may have a greater thickness on sides of a higher layer ( ) than on a lower layer ( ).