The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Jan. 29, 2002
Applicant:
Inventors:
Toshimitsu Taniguchi, Gunma, JP;
Shinya Mori, Saitama, JP;
Shinzo Ishibe, Gunma, JP;
Akira Suzuki, Gunma, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ;
U.S. Cl.
CPC ...
H01L 2/7108 ;
Abstract
In a semiconductor device having P type and N type wells formed bordering on a step on a P type semiconductor substrate, a first transistor (precise transistor) having a first linewidth is formed on the P type well in a step lower region while a second transistor (high-voltage transistor) having a second linewidth greater than a linewidth of the first transistor is formed on the N type well in a step higher region.