The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Mar. 01, 2002
Alfred P. Gnadinger, Colorado Springs, CO (US);
COVA Technologies, Inc., Colorado Springs, CO (US);
Abstract
A single transistor (“1T”) ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric. The memory cell of the present invention comprises a substrate, an overlying ferroelectric layer, which may comprise a film of rare earth manganite, and an interfacial oxide layer intermediate the substrate and the ferroelectric layer. In a preferred embodiment, the ferroelectric material utilized in an implementation of the present invention may be deposited by metallorganic chemical vapor deposition (“MOCVD”) or other techniques and exhibits a low relative dielectric permittivity of around 10 and forms an interfacial layer with a relative dielectric permittivity larger than that of SiO , which makes it particularly suitable for a 1T cell.