The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2004

Filed:

Nov. 07, 2002
Applicant:
Inventor:

Timothy J Phillips, Malvern, GB;

Assignee:

QinetiQ Limited, Farnborough, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ;
U.S. Cl.
CPC ...
H01L 3/10328 ;
Abstract

A bipolar transistor having base and collector regions of narrow bandgap semiconductor material and a minority-carrier excluding base contact has a base doping level greater than 10 cm . The transistor has a greater dynamic range, greater AC voltage and power gain-bandwidth products and a lower base access resistance than prior art narrow band-gap bipolar transistors.


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