The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Jul. 10, 2002
Leonid Chernyak, Orlando, FL (US);
Alfons Schulte, Orlando, FL (US);
University of Central Florida, Orlando, FL (US);
Abstract
The subject of this invention are method and system for enhancing performance characteristics (quantum efficiency, photoresponse, and spectral range) in photon detectors and solar cells (both of which are referred to as photon devices). The photon detectors are p-n junctions and/or Schottky barrier diodes. The solar cells are p-n junctions. The method and system can include injecting electrons into a p-region of a photon detector or solar cell over a selected time period of up to approximately 1500 seconds to control and improve minority carrier transport, in particular a diffusion length. The injection of electrons can occur periodically over several days and can occur under a o forward bias of the p-n junction or Schottky barrier. Improvements in quantum efficiency can be between approximately 2 to approximately 5 fold. The performance output of the device can be automatically sensed with computer type logic circuits, to actively control in real time the electron injection and to maximize performance results.