The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Jul. 19, 2002
Katsura Miyashita, Naka-gun, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed is a semiconductor device in which first and second MISFETs are formed, each of the first and second MISFETs including a source region, a drain region, a gate insulating film, a gate electrode and a covering insulating film. The source region and the drain regions are formed apart from each other within a semiconductor substrate. The gate insulating film is formed on the surface of the semiconductor substrate and positioned between the source region and the drain region, and the gate electrode is formed on the gate insulating film. The covering insulating film is formed to cover the side surface of the gate electrode, the gate insulating film and a part of the source region or the drain region. The first and second MISFETs differ from each other in the thickness of a first region of the covering insulating film positioned to cover the source region or the drain region.