The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2004

Filed:

Aug. 15, 2001
Applicant:
Inventors:

Jonathan F. Gorrell, Pompano Beach, FL (US);

Kenneth D. Cornett, Coral Springs, FL (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18244 ; H01L 2/1336 ; H01L 2/1337 ; H01L 2/1302 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/18244 ; H01L 2/1336 ; H01L 2/1337 ; H01L 2/1302 ; H01L 2/1461 ;
Abstract

A method for manufacturing a monolithic apparatus including a plurality of materials presenting a plurality of coplanar lands includes the steps of: (a) providing a substrate constructed of a first material and presenting a first land; (b) trenching the substrate to effect a cavity appropriately dimensioned to receive a semiconductor structure in an orientation presenting a second land generally coplanar with the first land; (c) depositing an accommodating layer constructed of a second material on the substrate and within the cavity to establish a workpiece; (d) depositing a composition layer constructed of a third material on the substrate; (e) selectively removing portions of the composition layer and the accommodating layer to establish the semiconductor structure; (f) depositing a cap layer constructed of a fourth material on the workpiece; and (g) removing the cap layer to establish a substantially planar face displaced from the plurality of lands by a predetermined distance.


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