The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Oct. 03, 2002
Ranbir Singh, Apex, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Edge termination for a silicon carbide Schottky rectifier is provided by including a silicon carbide epitaxial region on a voltage blocking layer of the Schottky rectifier and adjacent a Schottky contact of the silicon carbide Schottky rectifier. The silicon carbide epitaxial layer may have a thickness and a doping level so as to provide a charge in the silicon carbide epitaxial region based on the surface doping of the blocking layer. The silicon carbide epitaxial region may form a non-ohmic contact with the Schottky contact. The silicon carbide epitaxial region may have a width of from about 1.5 to about 5 times the thickness of the blocking layer. Schottky rectifiers with such edge termination and methods of fabricating such edge termination and such rectifiers are also provided. Such methods may also advantageously improve the performance of the resulting devices and may simplify the fabrication process.