The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Jun. 25, 2002
Bernard Pelliciari, St Egreve, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A growth method for a bulk II-VI type semiconductor material, including at least a first component and a second component. The method supplies in a crucible a charge including the components, with proportions of the components being such that the first component is used as a solvent. The crucible is then laced in an open tube reactor. The reactor temperature is then raised to obtain a temperature profile in the reactor ensuring the melting of the charge in the crucible and with the evaporation of the first component beginning, with the pressure inside the reactor being adjusted by the circulation of a gas so that the atmospheric pressure, with the partial pressure of the first component being greater than the partial pressure of the second component.