The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
May. 08, 2002
Randolph B. Heineke, Rochester, MI (US);
William K. Hogan, Rochester, MI (US);
Scott Allen Olson, Rochester, MI (US);
Clint Lee Schow, Rochester, MI (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p channel in a p-well of the substrate and forming at least one n channel in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p channel in an absorption region of the substrate when forming the at least one p channel in the p well of the FET and forming at least one n channel in the absorption region of the substrate when forming the at least one n channel in the p-well of the FET.