The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2004

Filed:

Feb. 12, 2002
Applicant:
Inventors:

Hiroyuki Wada, Kanagawa, JP;

Nobuhiko Umezu, Kanagawa, JP;

Koichi Tatsuki, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/166 ;
U.S. Cl.
CPC ...
H01L 2/166 ;
Abstract

A method of evaluating a state of a polysilicon film objectively, accurately, automatically, and in a non-contact manner is provided. The method includes the steps of picking up a surface of a polysilicon film formed by excimer laser annealing, dividing the picked-up image into meshes each having a specific size, calculating a contrast in each of the meshes, extracting a highest contrast value and a lowest contrast value in the picked-up image, calculating a contrast ratio therebetween, and judging an average grain size of the polysilicon film on the basis of the contrast ratio.


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