The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Aug. 03, 2000
Applicant:
Inventor:
Chanh Nguyen, Calabasas, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ; H01L 3/1109 ; H01L 2/906 ; H01L 2/993 ; H01L 3/1072 ;
U.S. Cl.
CPC ...
H01L 3/10328 ; H01L 3/1109 ; H01L 2/906 ; H01L 2/993 ; H01L 3/1072 ;
Abstract
The present invention provides a varactor diode for frequency multipliers at submillimeter wave frequencies and above. Functionally the new diode replaces the conventional heterostructure barrier varactor diode. Two important features of the antimony-based quantum well heterostructure barrier varactor are; first: an aluminum antimnide/aluminum-arsenic-antimnide heterostructure barrier and second: a bandgap-engineered, triangular quantum well cathode and anode.
Quick Actions:
Nguyen, Chanh. (2004). Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes (U.S. Patent No. 6673265). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6673265
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile