The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Jan. 05, 2001
Walter Hersel, Leonberg, DE;
Wolfram Breitling, Sachensheim, DE;
Reinhold Weible, Stuttgart, DE;
Rolf Falliano, Rudersberg-Steinenberg, DE;
GKR Gesellschaft fur Fahrzeugklimaregelung mbH, Schwieberdingen, DE;
Abstract
A power MOS transistor having a PMT chip located in a transistor housing in which the temperature of the transistor barrier junction is monitored is described. Protection of the PMT chip against overload and permanent damage is guaranteed without negatively affecting its switching function in that a protective circuit is provided in the transistor housing which directly measures the temperature of the transistor barrier junction using a temperature measuring element, and when a predefined or predefinable limit barrier junction temperature is reached reduces the drain current and thus the power loss of the PMT chip, the temperature measuring element being integrated in the PMT chip or accommodated in the transistor housing together with the protective circuit as an additional chip.