The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Jun. 25, 2002
Applicant:
Inventors:
Christopher Harris, Sollentuna, SE;
Mietek Bakowski, Södertälje, SE;
Jan Szmidt, Warszawa, PL;
Assignee:
Acreo AB, Kista, SE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/314 ; H01L 2/306 ; H01L 2/310 ; H01L 2/315 ; H01L 2/312 ;
U.S. Cl.
CPC ...
H01L 2/314 ; H01L 2/306 ; H01L 2/310 ; H01L 2/315 ; H01L 2/312 ;
Abstract
A semiconductor device comprises at least one first semiconductor layer ( ) and a second layer ( ) applied on at least a surface portion of the first layer for protecting the device. The protecting layer is of a second material having a larger energy gap between the valence band and the conduction band than a first material forming said first layer. The second material has at least in one portion of said protecting layer a nano-crystalline and amorphous structure by being composed of crystalline gains with a size less than 100 nm and a resistivity at room temperature exceeding 1×10 &OHgr;cm.