The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Jun. 07, 2002
Katsumi Satoh, Tokyo, JP;
Eisuke Suekawa, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device which can prevent an operation thereof from being uncontrollable to obtain a high reliability, and can be manufactured easily and can reduce a manufacturing cost. A p-type impurity layer containing a p-type impurity in a relatively high concentration is provided as an operation region of a diode in one of main surfaces of a silicon substrate containing an n-type impurity in a relatively low concentration and a plurality of ring-shaped Schottky metal layers are concentrically provided on the main surface of the silicon substrate around the p-type impurity layer with a space formed therebetween to surround the p-type impurity layer. A silicon oxide film is provided on the main surface of the silicon substrate around the p-type impurity layer and an anode electrode is provided on the p-type impurity layer.