The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Oct. 15, 2001
Applicant:
Inventors:
Katsumi Satoh, Tokyo, JP;
Shinichi Ishizawa, Fukuoka, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/947 ; H01L 2/9812 ; H01L 3/107 ; H01L 3/1108 ;
U.S. Cl.
CPC ...
H01L 2/947 ; H01L 2/9812 ; H01L 3/107 ; H01L 3/1108 ;
Abstract
A semiconductor device having a silicon carbide layer of a singular conductivity type. The silicon carbide layer includes a surface having a first region, a second region, and a third region sandwiched between the first region and the second region. An anode electrode having a Schottky contact with the first region, a cathode electrode having an ohmic contact with the second region, and a control electrode having a Schottky contact with the third region are included in the semiconductor device.