The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Feb. 28, 2003
Applicant:
Inventor:
Toshiaki Kojima, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 2/362 ;
Abstract
An insulation trench is formed between a drain region formed in a p-type well and a substrate contact region of GG NMOS transistor. The insulation trench extends deeper than the thickness of the p-type well and reaches the p-type substrate of the transistor. This configuration provides a parasitic BJT of the ESD protection transistor with an improves TLP characteristic, and facilitates the operation of the parasitic BJT of the GG MOS transistor accordingly.
Kojima, Toshiaki. (2003). Semiconductor device having esd protective transistor (U.S. Patent No. 6670678). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6670678
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile