The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Feb. 11, 2002
Applicant:
Inventors:
Zhijian Lu, Poughkeepsie, NY (US);
Shahid Butt, Ossining, NY (US);
Alois Gutmann, Poughkeepsie, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 3/300 ;
Abstract
A mask ( ) and method for patterning a semiconductor wafer. The mask ( ) includes apertures ( ) and assist lines ( ) disposed between apertures ( ). The assist lines ( ) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.