The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Feb. 28, 2001
Takuo Tamura, Yokohama, JP;
Kiyoshi Ogata, Yokohama, JP;
Yoichi Takahara, Yokohama, JP;
Hironaru Yamaguchi, Yokohama, JP;
Yoshinobu Kimura, Tokyo, JP;
Makoto Ohkura, Fuchyu, JP;
Hironobu Abe, Chiba, JP;
Shigeo Shimomura, Mobara, JP;
Masakazu Saitou, Mobara, JP;
Michiko Takahashi, Mobara, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H O solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.